01/99 b-53 j176, j177 p-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 30 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 gate, 3 source surface mount SMPJ176, smpj177 at 25c free air temperature: j176 j177 process pj99 static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss 30 30 v i g = 1 a, v ds = ?v gate reverse current i gss 11nav gs = 20 v, v ds = ?v gate source cutoff voltage v gs(off) 1 4 0.8 2.25 v v ds = C 15 v, i d = C 10 na drain saturation current (pulsed) i dss C 2 C 35 C 1.5 C 20 ma v ds = C 15 v, v gs = ? v drain cutoff current i d(off) C 1 C 1 na v ds = C 15 v, v gs = 10 v dynamic electrical characteristics max max drain source on resistance r ds(on) 250 300 v gs = ?, v ds < = 0.1 v f = 1 khz dynamic electrical characteristics typ typ drain gate capacitance c gd 5.5 5.5 pf v ds = ? v, v gs = 10 v f = 1 mhz source gate capacitance c gs 5.5 5.5 pf v ds = ? v, v gs = 10 v f = 1 mhz drain gate + source gate capacitance c gd + c gs 32 32 pf v ds = v gs = ? v f = 1 mhz switching characteristics j176 j177 turn on delay time td (on) 15 20 ns v dd C 6 C 6 v rise time t r 20 25 ns v gs(off) 63v turn off delay time td (off) 15 20 ns r l 5.6 k 10 k fall time t f 20 25 ns v gs(on) ??v choppers commutators analog switches 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-53
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